Power semiconductor device

Results: 192



#Item
512 Principal Research Results Project Research ― Development of a Supply/Demand Infrastructure for Next-generation Electric Power Low-loss Power Semiconductor  Background and

2 Principal Research Results Project Research ― Development of a Supply/Demand Infrastructure for Next-generation Electric Power Low-loss Power Semiconductor Background and

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Source URL: criepi.denken.or.jp

Language: English - Date: 2012-11-30 03:10:48
52Project Subjects Low-loss Power Semiconductors Background and Objective Further electrification and the use of low-carbon power sources are essential from the viewpoints of the conservation of the global environment and

Project Subjects Low-loss Power Semiconductors Background and Objective Further electrification and the use of low-carbon power sources are essential from the viewpoints of the conservation of the global environment and

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Source URL: criepi.denken.or.jp

Language: English - Date: 2010-12-28 01:56:20
53Principal Research Results  Investigation of Forward Voltage Degradation of Silicon Carbide (SiC) pn Diode and Fabrication of High Voltage SiC pn Diode Background Since silicon carbide (SiC) power devices have a potentia

Principal Research Results Investigation of Forward Voltage Degradation of Silicon Carbide (SiC) pn Diode and Fabrication of High Voltage SiC pn Diode Background Since silicon carbide (SiC) power devices have a potentia

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Source URL: criepi.denken.or.jp

Language: English - Date: 2008-09-29 03:16:04
54CS_ad_213x282mm_semiconductor_today_feb14.indd

CS_ad_213x282mm_semiconductor_today_feb14.indd

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Source URL: www.semiconductor-today.com

Language: English - Date: 2015-04-08 17:14:26
55The next stage in power semiconductors LESLIE LANGNAU, Associate Editor Recent design innovations have resulted in a new power semiconductor that can switch with the speed of an Insulated Gate Bipolar Transistor and cond

The next stage in power semiconductors LESLIE LANGNAU, Associate Editor Recent design innovations have resulted in a new power semiconductor that can switch with the speed of an Insulated Gate Bipolar Transistor and cond

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Source URL: fab.cba.mit.edu

Language: English - Date: 2010-09-15 01:34:30
56Mar[removed]Vol[removed]Mitsubishi Electric Recent Development Results of Power Device • Editorial-Chief Kiyoshi Sakai

Mar[removed]Vol[removed]Mitsubishi Electric Recent Development Results of Power Device • Editorial-Chief Kiyoshi Sakai

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Source URL: www.mitsubishielectric.com

Language: English - Date: 2015-03-22 21:29:09
57Team develops ultrathin polymer insulators key to low-power soft electronics

Team develops ultrathin polymer insulators key to low-power soft electronics

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Source URL: phys.org

Language: English - Date: 2015-04-02 14:13:49
58

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Source URL: fab.cba.mit.edu

Language: English - Date: 2010-09-15 01:34:31
59Thermal Analysis for 3D Integration GSA OctGene Matter, VP Application Engineering, DOCEA POWER © DOCEA Power - Confidential

Thermal Analysis for 3D Integration GSA OctGene Matter, VP Application Engineering, DOCEA POWER © DOCEA Power - Confidential

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Source URL: www.gsaglobal.org

Language: English - Date: 2014-01-22 10:42:09
60On-Wafer Probing Best Practices for Power Electronics Michael Lyman Market Development Manager August 2014 GSA Working Group

On-Wafer Probing Best Practices for Power Electronics Michael Lyman Market Development Manager August 2014 GSA Working Group

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Source URL: www.gsaglobal.org

Language: English - Date: 2014-08-22 15:49:59